DIO221X

Version 1.1, Feb 2024

www.dioo.com

© 2024 DIOO MICROCIRCUITS CO., LTD.

5

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

Settling time (1%)

VSENSE = 10 mVPP

to 100 mVPP,

CLOAD = 5 pF

DIA2210

25

μs

DIA2211

40

DIA2212

100

Noise, RTI

Voltage noise density (2)

70

nV/

Hz

Note:

(1) Total output error includes effects of gain error, VOS and non-linearity error.

(2) Guaranteed by design.

(3) Specifications subject to change without notice.

6.2. Comparator

The values are obtained under these conditions unless otherwise specified: TA = 25°C, VS = 12 V, VCM = 12 V, VSENSE = 100 mV,

RL = 10 kΩ to GND, and RPULL-UP = 5.1 kΩ connected from CMPOUT to VS.

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

Offset voltage

Threshold

TA = 25°C

590

600

620

mV

TA = -40°C to 125°C

586

625

mV

Hysteresis (1)

TA = -40°C to 85°C

-8

mV

Input bias current

CMPIN pin

1

nA

Input voltage range

CMPIN pin

TA = -40°C to 125°C

0 to

(VS - 1.5)

V

Output (open-drain)

Large-signal differential

voltage gain (2)

CMPOUT = 1 V to 4 V,

RL ≥ 15 kΩ connected to 5 V

200

V/mV

ILKG

High-level leakage current (3) (4)

VID = 0.4 V, VOH = VS

1

nA

VOL

Low-level output voltage (3)

VID = -0.6 V, IOL = 2.35 mA

145

320

mV

Response time

tRES

Positive response time

RPULL-UP = 5.1 kΩ to 12 V,

CL = 15 pF,

CMPIN = 100 mV ~ 605 mV

3.5

μs

Negative response time

RPULL-UP = 5.1 kΩ to 12 V,

CL = 15 pF,

CMPIN = 605 mV ~ 505 mV

1.5

μs