DIO2399A/B

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DIO2399A/B• Rev. 1.7

Absolute Maximum Ratings

Stresses beyond those listed under “Absolute Maximum Rating” may cause permanent damage to the device. These are stress

ratings only and functional operation of the device at these or any other condition beyond those indicated in the operational sections

of the specifications is not implied. Exposure to absolute maxim rating conditions for extended periods may affect device reliability.

Symbol

Parameter

Rating

Unit

Supply voltage

26

V

VIN+, VIN-

Analogy inputs

Differential (VIN+) – (VIN-)

-26 to 26

V

Common-mode

GND-0.3 to 26

V

REF input

GND-0.3 to (V+)+0.3

V

Output

GND-0.3 to (V+)+0.3

V

Input current into all pins

5

mA

TA

Operating temperature

-40 to 105

°C

TSTG

Storage temperature

-65 to 150

°C

TJ

Junction temperature

150

°C

θJA

Thermal resistance

SC70-6

250

°C/W

QFN1.8*1.4-10

80

°C/W

ESD

HBM

±3000

V

Electrical Characteristics

Typical value: TA = 25°C, VS = 5 V, VIN+ = 12 V, VSENSE = VIN+ - VIN-, and VREF = VS/2, unless otherwise specified.

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

Input

VCM

Common-mode input range

-0.3

26

V

CMR

Common-mode rejection

VIN+ = 0 V to 26 V, VSENSE = 0 mV

90

dB

VOS

Offset voltage, RTI (1)

VSENSE = 0 mV, VCM = VS/2

±5

±30

µV

VSENSE = 0 mV, VCM = 8 V

±5

±150

dVOS/dT

Input vs. Temperature

0.5

µV/°C

PSR

Input vs. Power supply

VS = 2.7 V to 18 V, VIN+ = 18 V,

VSENSE = 0 mV

120

dB

IB

Input bias current

VSENSE = 0 mV

28

µA

IOS

Input offset current

VSENSE = 0 mV

±0.02

µA

Output

G

Gain

DIO2399A

50

V/V

DIO2399B

100

Gain error

VSENSE = -8 mV to 8 mV

±0.03

±1.5

%