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2SC5825 Scheda tecnica(PDF) 1 Page - Inchange Semiconductor Company Limited |
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2SC5825 Scheda tecnica(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 2 page ![]() isc Silicon NPN Transistor 2SC5825 www.iscsemi.com 1 FEATURES · High speed switching · Low saturation voltage · Strong discharge power for inductive load And capacitance load APPLICATIONS · Low frequency amplifier · High speed switching ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBO L PARAMETER VALUE UNIT VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 6 V IC Collector Current 3 A ICP Collector Current-Peak 6 A PC Total power dissipation 10 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ |
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