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IPP034N08N5 Scheda tecnica(PDF) 1 Page - Inchange Semiconductor Company Limited |
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IPP034N08N5 Scheda tecnica(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 2 page ![]() isc N-Channel MOSFET Transistor IPP034N08N5 www.iscsemi.com 2023-9-7 1 FEATURES · Drain Current -ID=120A@ TC=25℃ · Drain Source Voltage -VDSS= 80V(Min) · Static Drain-Source On-Resistance -RDS(on) = 3.4mΩ(Max)@VGS= 10V DESCRIPTION · low-voltage motor drive · solar equipment · telecom/server rectifier ABSOLUTE MAXIMUM RATINGS(Ta=25℃) THERMAL CHARACTERISTICS SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 80 V VGS Gate-Source Voltage-Continuous ± 20 V ID Drain Current-Continuous 120 A IDM Drain Current-Single Pluse 480 A PD Total Dissipation 167 W TJ Max. Operating Junction Temperature 175 ℃ Tstg Storage Temperature -55~175 ℃ SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance, Junction to Case 0.9 ℃ /W |
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