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IXTH10P50P Scheda tecnica(PDF) 1 Page - Inchange Semiconductor Company Limited |
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IXTH10P50P Scheda tecnica(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 2 page  isc P-Channel MOSFET Transistor IXTH10P50P www.iscsemi.com 1 FEATURES · Drain Current -ID= -10A@ TC=25℃ · Drain Source Voltage -VDSS= -500V(Min) · Static Drain-Source On-Resistance -RDS(on) = 1.0Ω(Max)@VGS= -10V DESCRIPTION · High-Side Switches · DC Choppers · Current Regulators ABSOLUTE MAXIMUM RATINGS(Ta=25℃) THERMAL CHARACTERISTICS SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage -500 V VGS Gate-Source Voltage-Continuous ± 20 V ID Drain Current-Continuous -10 A IDM Drain Current-Single Pulse -30 A PD Total Dissipation 300 W TJ Max. Operating Junction Temperature 155 ℃ Tstg Storage Temperature -55~155 ℃ SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance, Junction to Case 0.42 ℃ /W |
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