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R5F1216AMSP Scheda tecnica(PDF) 73 Page - Renesas Technology Corp |
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R5F1216AMSP Scheda tecnica(HTML) 73 Page - Renesas Technology Corp |
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73 / 85 page ![]() RL78/G16 3. ELECTRICAL SPECIFICATIONS (TA = −40 to +105°C, TA = −40 to +125°C) R01DS0431EJ0130 Rev.1.30 Page 73 of 85 May 19, 2025 3.8 Flash Memory Programming Characteristics [TA = −40 to +105°C: G products, TA = −40 to +125°C: M products, 2.4 V ≤ VDD ≤ 5.5 V, VSS = 0 V] Item Symbol Condition MIN. TYP. MAX. Unit Number of code flash rewrites Note 1, Note 2 Cerwr Retained for 20 years TA = +85°C Note 3 1000 Times Number of data flash rewrites Note 1, Note 2 Retained for 1 year TA = +25°C 1,000,000 Times Retained for 5 years TA = +85°C Note 3 100,000 Times Retained for 20 years TA = +85°C Note 3 10,000 Times Note 1. 1 erase + 1 write after the erase is regarded as 1 rewrite. The retaining years are until next rewrite after the rewrite. Note 2. These are the characteristics of the flash memory and the results obtained from reliability testing by Renesas Electronics. Note 3. This temperature is the average value at which data are retained. Code flash/data flash self-programming time [TA = −40 to +105°C: G products, TA = −40 to +125°C: M products, 2.4 V ≤ VDD ≤ 5.5 V, VSS = 0 V] Item Symbol fCLK = 1 MHz fCLK = 16 MHz Unit MIN. TYP. MAX. MIN. TYP. MAX. Writing (4 bytes) tP4 104 905 53.8 504.9 µs Block erasure (1 KB) tE1K 7.9 262.3 5.5 214.1 ms Caution The listed values do not include the time until the operations of the flash memory start following execution of an instruction by software. 3.9 Dedicated Flash Memory Programmer Communication (UART) [TA = −40 to +105°C: G products, TA = −40 to +125°C: M products, 2.4 V ≤ VDD ≤ 5.5 V, VSS = 0 V] Item Symbol Condition MIN. TYP. MAX. Unit Transfer rate 115,200 bps Remark The transfer rate during flash memory programming is fixed to 115,200 bps. |
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