MJB32B datasheet(2/5 Pages) STMICROELECTRONICS

Il numero della parte	MJB32B

Spiegazioni elettronici	PNP SILICON POWER TRANSISTOR

PDF	5 Pages

Scroll/Zoom	100%

Produttore elettronici	STMICROELECTRONICS [STMicroelectronics]

Homepage	http://www.st.com

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THERMAL DATA

Rthj-case

Rthj-amb

Thermal Resistance Junction-case

Max

Thermal Resistance Junction-ambient

Max

3.12

62.5

oC/W

ELECTRICAL CHARACTERISTICS (Tcase = 25

oC unless otherwise specified)

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

ICEO

Collector Cut-off

Current (IB = 0)

VCE = -60 V

-50

µA

ICES

Collector Cut-off

Current (VBE = 0)

VCE = -80 V

-20

µA

IEBO

Emitter Cut-off Current

(IC = 0)

VEB = -5 V

-0.1

VCEO(sus)

∗ Collector-Emitter

Sustaining Voltage

(IB = 0)

IC = -30 mA

-80

VCE(sat)

∗ Collector-Emitter

Saturation Voltage

IC = -3 A

IB = -375 mA

-1.2

VBE

∗

Base-Emitter Voltage

IC = -3 A

VCE = -4 V

-1.8

hFE

∗

DC Current Gain

IC = -1 A

VCE = -4 V

IC = -3 A

VCE = -4 V

hfe

Small Signall Current

Gain

IC = -0.5 A VCE = -10 V

f = 1 KHz

IC = -0.5 A VCE = -10 V

f = 1 MHz

∗ Pulsed : pulse duration = 300 µs, duty cycle ≤ 2%

Safe Operating Area

Derating Curves

MJB32B

2/5

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