MJD340 datasheet(1/5 Pages) STMICROELECTRONICS

Il numero della parte	MJD340

Spiegazioni elettronici	COMPLEMENTARY SILICON POWER TRANSISTORS

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MJD340

MJD350

COMPLEMENTARY SILICON POWER TRANSISTORS

s

SGS-THOMSON PREFERRED SALESTYPES

s

COMPLEMENTARY PNP - NPN DEVICES

s

MEDIUM VOLTAGE CAPABILITY

s

SURFACE-MOUNTING TO-252 (DPAK)

POWER PACKAGE IN TAPE & REEL

(SUFFIX ”T4”)

s

ELECTRICAL SIMILAR TO MJE340 AND

MJE350

APPLICATIONS

s

SOLENOID/RELAY DRIVERS

s

GENERAL PURPOSE SWITCHING AND

AMPLIFIER

DESCRIPTION

The MJD340 and MJD350 form complementary

NPN - PNP pairs.

They are manufactured using Medium Voltage

Epitaxial Planar technology, resulting in a rugged

high performance cost-effective transistor.

INTERNAL SCHEMATIC DIAGRAM

June 1997

ABSOLUTE MAXIMUM RATINGS

Symbol

Parameter

Valu e

Un it

NPN

MJD340

PNP

MJD350

VCBO

Collector-Base Voltage (I E = 0)

300

V

VCEO

Collector-Emitt er Voltage (IB = 0)

300

V

VEBO

Emitt er-Base Voltage (IC = 0)

3

V

IC

Collector Current

0. 5

A

ICM

Collector Peak Current (tp = 25

oC)

0.75

A

Ptot

Tot al Power Dissipation at Tcase

≤ 25 oC15

W

Tstg

Storage T emperature

-65 to 150

oC

Tj

Max Operating Junction T emperature

150

oC

For PNP types voltage and current values are negative.

DPAK

TO-252

(Suffix ”T4”)

1

3

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