2SA1380 datasheet(1/2 Pages) ISC

Il numero della parte	2SA1380

Spiegazioni elettronici	Silicon PNP Power Transistor

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Produttore elettronici	ISC [Inchange Semiconductor Company Limited]

Homepage	http://www.iscsemi.cn

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Silicon PNP Power Transistor

2SA1380

www.iscsemi.com

1

DESCRIPTION

· Collector-Emitter Breakdown Voltage

-V(BR)CEO= -200V(Min)

· Good Linearity of hFE

· Complement to Type 2SC3502

APPLICATIONS

·

Video output circuits

·

High-voltage high-frequency signal amplifiers

·

Ultrahigh‑ definition CRT display

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL

PARAMETER

VALUE

UNIT

VCBO

Collector-Base Voltage

-200

V

VCEO

Collector-Emitter Voltage

-200

V

VEBO

Emitter-Base Voltage

-5.0

V

IC

Collector Current-Continuous

-100

mA

ICP

Collector Current Pluse

-200

mA

PC

Collector Power Dissipation

5

W

TJ

Junction Temperature

150

℃

Tstg

Storage Temperature Range

-55~150

℃

3

2

1

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