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Motore di ricerca datesheet componenti elettronici |
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Motore di ricerca datesheet componenti elettronici |
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40CTQ150S Scheda tecnica(PDF) 1 Page - Inchange Semiconductor Company Limited |
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40CTQ150S Scheda tecnica(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 2 page  Schottky Rectifiers Diode 40CTQ150S www.iscsemi.com 1 FEATURES · Low forward voltage drop · Designed and qualified for industrial level APPLICATIONS · Reverse battery Protection · Switching · Converters ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VRRM Peak repetitive Reverse voltage 150 V VRMS RMS Voltage 150 V IF(AV) Average Forward Rectified Current 40 A IFSM Peak Forward Surge Current tp=5μs sine 1500 A TJ Junction temperature 150 ℃ Tstg storage temperature -40~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal resistance, junction-to-case 4.7 ℃ /W ELECTRICAL CHARACTERISTICS(TJ = 25°C unless otherwise specified) SYMBOL PARAMETER CONDITIONS MIN MAX UNIT VF Forward voltage IF= 20A -- 0.93 V IR Reverse leakage current VR = 150V -- 50 μA |
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