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LA-ETSF Scheda tecnica(PDF) 4 Page - ams-OSRAM AG |
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LA-ETSF Scheda tecnica(HTML) 4 Page - ams-OSRAM AG |
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4 / 22 page ![]() LA ETSF 4 Version 1.6 | 2021-02-17 Characteristics I F = 50 mA; TS = 25 °C Parameter Symbol Values Peak Wavelength λ peak typ. 624 nm Dominant Wavelength 3) I F = 50 mA λ dom min. typ. max. 612 nm 617 nm 624 nm Spectral Bandwidth at 50% I rel,max ∆λ typ. 18 nm Viewing angle at 50% I V 2φ typ. 120 ° Forward Voltage 4) I F = 50 mA V F min. typ. max. 1.90 V 2.15 V 2.50 V Reverse current 2) V R = 12 V I R typ. max. 0.01 µA 10 µA Temperature Coefficient of Peak Wavelength -10°C ≤ T ≤ 100°C TC λpeak typ. 0.14 nm / K Real thermal resistance junction/solderpoint 5) R thJS real typ. max. 70 K / W 95 K / W Electrical thermal resistance junction/solderpoint 5) with efficiency η e = 29 % R thJS elec. typ. max. 50 K / W 67 K / W |
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