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MBR7H60 Scheda tecnica(PDF) 1 Page - Inchange Semiconductor Company Limited |
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MBR7H60 Scheda tecnica(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 2 page ![]() Schottky Rectifier MBR7H60 www.iscsemi.com 1 FEATURES · Guardring For Overvoltage Protection · Low Forward Voltage Drop · High Frequency Operation APPLICATIONS · DC/DC Converters · High Frequency Rectifier ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VRRM Maximum repetitive peak reverse voltage 60 V IF(AV) Average Rectified Forward Current 7.5 A IFRM Peak repetitive forward current at TC = 155℃ (rated VR, 20 KHz sq. wave) 15 A IFSM Peak forward surge current 8.3ms single half sine-wave superimposed on rated load (JEDEC Method) 150 A TJ Junction Temperature -65~175 ℃ Tstg Storage Temperature Range -65~175 ℃ dV/dt Voltage rate of change 10000 V/μs THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 3.0 ℃ /W ELECTRICAL CHARACTERISTICS SYMBOL PARAMETER CONDITIONS MIN MAX UNIT VF Maximum Instantaneous Forward Voltage IF= 7.5A ; TC= 25℃ -- 0.73 V IF= 15A ; TC= 25℃ -- 0.87 V IR Maximum Instantaneous Reverse Current Rated DC Voltage, TC= 25℃ -- 50 uA |
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