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MBRF2035CT Scheda tecnica(PDF) 1 Page - Inchange Semiconductor Company Limited |
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MBRF2035CT Scheda tecnica(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 2 page ![]() Schottky Rectifiers Diode MBRF2035CT www.iscsemi.com 1 FEATURES · Low power loss, high efficiency · High surge current capability · RoHS Compliant APPLICATIONS · Adapters · DC to DC converters ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VRRM Peak repetitive Reverse voltage 35 V VRMS RMS Voltage 35 V IF(AV) Average Forward Rectified Current 20 A IFSM Peak Forward Surge Current 8.3ms Single Half Sine-wave Superimosed on Rated Load 150 A TJ Junction temperature 150 ℃ Tstg storage temperature -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal resistance, junction-to-case 1.5 ℃ /W ELECTRICAL CHARACTERISTICS(TJ = 25°C unless otherwise specified) SYMBOL PARAMETER CONDITIONS MIN MAX UNIT VF Forward voltage IF= 10A -- 0.8 V IR Reverse leakage current VR = 50V -- 100 uA |
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