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MTP3055 Scheda tecnica(PDF) 3 Page - STMicroelectronics |
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MTP3055 Scheda tecnica(HTML) 3 Page - STMicroelectronics |
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3 / 8 page ![]() ELECTRICAL CHARACTERISTICS (continued) SWITCHING RESISTIVE LOAD Symbo l Parameter Test Con ditions Min. Typ. Max. Unit td(on) tr td(off) tf Turn-on Time Rise Time Turn-off Delay T ime Fall T ime VDD =30 V ID =7 A RG =50 Ω VGS =10 V (see t est circuit) 20 65 70 35 ns ns ns ns Qg Q gs Qgd Tot al G ate Charge Gat e-Source Charge Gat e-Drain Charge ID =12 A VGS =10 V VDD =40 V (see t est circuit) 15 7 5 nC nC nC SOURCE DRAIN DIODE Symbo l Parameter Test Con ditions Min. Typ. Max. Unit ISD ISDM ( •) Source-drain Current Source-drain Current (pulsed) 12 48 A A VSD ( ∗)Forward On Voltage ISD =12 A VGS =0 2. 0 V trr Qrr Reverse Recovery Time Reverse Recovery Charge ISD = 12 A di/dt = 100 A/ µs VDD =30 V Tj = 150 oC 65 0.17 ns µC ( ∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 % ( •) Pulse width limited by safe operating area Safe Operating Area Thermal Impedance MTP3055E 3/8 |
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