PD57002S datasheet(1/16 Pages) STMICROELECTRONICS

Il numero della parte	PD57002S

Spiegazioni elettronici	RF POWER TRANSISTORS The LdmoST Plastic FAMILY

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Produttore elettronici	STMICROELECTRONICS [STMicroelectronics]

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March, 7 2003

PD57002

PD57002S

RF POWER TRANSISTORS

The

LdmoST Plastic FAMILY

N-CHANNEL ENHANCEMENT-MODE LATERAL

MOSFETs

• EXCELLENT THERMAL STABILITY

• COMMON SOURCE CONFIGURATION

• POUT = 2 W with 15 dB gain @ 960 MHz / 28 V

• NEW RF PLASTIC PACKAGE

DESCRIPTION

The PD57002 is a common source N-Channel, en-

hancement-mode lateral Field-Effect RF power

transistor designed for broadband commercial and

industrial applications at frequencies up to 1000

MHz. The PD57002 is designed for high gain and

broadband performance operating in common

source mode at 28 V. It is ideal for digital cellular

BTS applications requiring high linearity.

The PowerSO-10 plastic package, designed to of-

fer high reliability, is the first ST JEDEC approved,

high power SMD package. It has been specially

optimized for RF needs and offers excellent RF

performances and ease of assembly.

PowerSO-10RF

(formed lead)

ORDER CODE

PD57002

BRANDING

PD57002

PowerSO-10RF

(straight lead)

ORDER CODE

PD57002S

BRANDING

PD57002S

ABSOLUTE MAXIMUM RATINGS (TCASE = 25°C)

Symbol

Parameter

Value

Unit

V(BR)DSS

Drain-Source Voltage

65

V

VGS

Gate-Source Voltage

± 20

V

ID

Drain Current

0.25

A

PDISS

Power Dissipation (@ Tc = 70°C)

4.75

W

Tj

Max. Operating Junction Temperature

165

°C

TSTG

Storage Temperature

-65 to +150

°C

THERMAL DATA

Rth(j-c)

Junction -Case Thermal Resistance

20

°C/W

Mounting recommendations are available in

www.st.com/rf/ (look for application note AN1294)

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