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Motore di ricerca datesheet componenti elettronici |
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Motore di ricerca datesheet componenti elettronici |
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LE-A-Q7WN Scheda tecnica(PDF) 4 Page - ams-OSRAM AG |
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LE-A-Q7WN Scheda tecnica(HTML) 4 Page - ams-OSRAM AG |
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4 / 25 page  LE A Q7WN DATASHEET DATASHEET 4 | Version 1.0 | 2025-06-25 Maximum Ratings Parameter Symbol Values Operating Temperature T op min. max. -40 °C 105 °C Storage Temperature T stg min. max. -40 °C 105 °C Junction Temperature T j max. 125 °C Forward Current T S = 25 °C; per chip I F min. max. 40 mA 2500 mA Forward Current pulsed T S = 25 °C; per chip I F pulse 3300 mA ESD withstand voltage acc. to ANSI/ESDA/JEDEC JS-001 (HBM, Class 2) V ESD 2 kV Reverse current 2) I R max. 200 mA |
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