STP80PF55 datasheet(4/13 Pages) STMICROELECTRONICS

Il numero della parte	STP80PF55

Spiegazioni elettronici	P-channel 55V - 0.016Ω - 80A - TO-220 - D2PAK STripFET™II Power MOSFET

PDF	13 Pages

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Produttore elettronici	STMICROELECTRONICS [STMicroelectronics]

Homepage	http://www.st.com

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4 / 13 page

Electrical characteristics

STB80PF55 - STP80PF55

4/13

Electrical characteristics

(TCASE=25°C unless otherwise specified)

Table 3.

On/off states

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

V(BR)DSS

Drain-source

breakdown voltage

ID = 250mA, VGS = 0

IDSS

Zero gate voltage

drain current (VGS = 0)

VDS = Max rating

VDS = Max rating, TC=125°C

µA

IGSS

Gate-body leakage

current (VDS = 0)

VGS = ±16V

±10

µA

VGS(th)

Gate threshold voltage

VDS = VGS, ID = 250µA

RDS(on)

Static drain-source on

resistance

VGS = 10V, ID = 40A

0.016 0.018

Ω

Table 4.

Dynamic

Symbol

Parameter

Test conditions

Min.

Typ.

Max. Unit

gfs

Forward transconductance

VDS > ID(on) x RDS(on)max,

ID= 40A

Ciss

Coss

Crss

Input capacitance

Output capacitance

Reverse transfer

capacitance

VDS = 25V, f = 1MHz,

VGS = 0

5500

1130

600

Qgs

Qgd

Total gate charge

Gate-source charge

Gate-drain charge

ID = 25A, VDD = 80V,

VGS = 10V

(see Figure 14)

190

258

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