BUXD87 datasheet(1/2 Pages) ISC

Il numero della parte	BUXD87

Spiegazioni elettronici	Silicon NPN Power Transistor

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Produttore elettronici	ISC [Inchange Semiconductor Company Limited]

Homepage	http://www.iscsemi.cn

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Silicon NPN Power Transistor

BUXD87

www.iscsemi.com

1

DESCRIPTION

· Collector-Emitter Breakdown Voltage

-V(BR)CEO= 450V(Min)

· Collector-Emitter Saturation Voltage

-VCE(sat) :1.0V(Max) @IC= 0.2A

APPLICATIONS

· high switching speeds

· high voltage withstand capability

ABSOLUTE MAXIMUM RATINGS(TC=25℃)

SYMBOL

PARAMETER

VALUE

UNIT

VCBO

Collector-Base Voltage

1000

V

VCEO

Collector-Emitter Voltage

450

V

VEBO

Emitter-Base Voltage

5

V

IC

Collector Current

0.5

A

ICP

Collector Current-Pulse,tp＜5ms

1.0

A

IB

Base current

0.3

A

IBM

Base Peak Current,tp＜5ms

0.6

A

PC

Total Power Dissipation

20

W

TJ

Junction Temperature

150

℃

Tstg

Storage Temperature Range

-65~150

℃

THERMAL CHARACTERISTICS

SYMBO

L

PARAMETER

MAX

UNIT

Rth j-c

Thermal

Resistance,Junction

to

Case

6.25

℃

/W

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