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SMBYT03 Scheda tecnica(PDF) 3 Page - STMicroelectronics |
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SMBYT03 Scheda tecnica(HTML) 3 Page - STMicroelectronics |
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3 / 5 page ![]() 0.001 0.01 0.1 1 10 0 2 4 6 8 10 12 14 16 18 20 IM t =0.5 t(s) IM(A) Tc=25 C o Tc=55 C o Tc=40 C o Fig.3 : Non repetitive surge peak forward current versus overload duration. 0.001 0.01 0.1 1 10 0.01 0.1 1 Zth(j-c) (tp. ) K= Rth(j-c) =0 .5 =0 . 2 =0 . 1 Single pul se tp(s) T =tp/T tp K Fig.4 : Relative variation of thermal impedance junction to lead versus pulse duration. 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 0 10 20 30 40 50 60 P=0.5W T I M =tp/T tp IM(A) P=1.5W P=2.5W Fig.2 : Peak current versus form factor. 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 =0.05 =0.1 =0.2 =0.5 T =tp/T tp IF(av)(A) PF(av)(W) =1 Fig.1 : Low frequency power losses versus average current. 0 20406080 100 120 140 160 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 T =tp/T tp =0.5 F(av) (A) I o Tamb( C) 1cm Cu 2 Rth(j-a)=65 C/W o Rth(j-a)=Rth(j-l) Fig.6 : Average current versus ambient temperature. (duty cycle : 0.5) 0.01 0.1 1 10 0.0 0.3 0.6 0.9 1.2 1.5 1.8 2.1 2.4 2.7 3.0 I FM(A) VFM(V) Tl=100 C o 50 Fig.5 : Voltage drop versus forward current. (Maximum values) SMBYT03 3/5 |
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