SO5401 datasheet(2/4 Pages) STMICROELECTRONICS

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THERMAL DATA

Rthj-amb

•

Rth j-SR

•

Thermal Resistance Junction-Ambient

Max

Thermal Resistance Junction-Substrat e

Max

620

400

oC/W

• Mounted on a ceramic substrate area = 7 x 5 x 0.5 mm

ELECTRICAL CHARACTERISTICS (Tcase =25

oC unless otherwise specified)

Symb ol

Parameter

Test Cond ition s

Mi n.

Typ .

Max.

Un it

ICBO

Collect or Cut-off

Current (IE =0)

VCB =-120 V

-50

IEBO

Collect or Cut-off

Current (IC =0)

VEB =-3 V

-50

V(BR)CBO

∗ Collector-Emitter

Breakdown Volt age

(IE =0)

IC =-100

µA-160

V(BR)CEO

∗ Collector-Emitter

Breakdown Volt age

(IB =0)

IC =-1 mA

-150

V(BR)EBO

Emitt er-Base

Breakdown Volt age

(IC =0)

IC =-10 nA

-5

VCE(sat)

∗ Collector-Emitter

Saturat ion Voltage

IC =-10 mA

IB =-1 mA

IC =-50 mA

IB =-5 mA

-0.2

-0.5

VBE(s at)

∗ Collector-Base

Saturat ion Voltage

IC =-10 mA

IB =-1 mA

IC =-50 mA

IB =-5 mA

-1

hFE

∗

DC Current G ain

IC =-1 mA

VCE =-5 V

IC =-10 mA

VCE =-5 V

IC =-50 mA

VCE =-5 V

240

Transit ion F requency

IC =-10 mA VCE = -10V f = 1 MHz

100

400

MHz

CCB

Collect or Base

Capacitance

IE =0

VCE = -10 V

f = 1 MHz

Noise Figure

VCE =-5 V

IC = -0.25 mA

f = 1KHz

∆f = 200 Hz RG =1 KΩ

5dB

hfe

∗

Small Signal Current

Gain

VCE =-5 V

IC =-1 mA

f = 1KHz

200

∗ Pulsed: Pulse duration = 300 µs, duty cycle ≤ 2%

SO5401

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