Motore di ricerca datesheet componenti elettronici
  Italian  ▼
ALLDATASHEETIT.COM

X  

Preview PDF HTML

BFC18 Scheda tecnica(PDF) 2 Page - Seme LAB

Il numero della parte BFC18
Spiegazioni elettronici  N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
PDF  2 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
Produttore elettronici  SEME-LAB [Seme LAB]
Homepage  http://www.semelab.co.uk
Logo SEME-LAB - Seme LAB

BFC18 Scheda tecnica(HTML) 2 Page - Seme LAB

  BFC18 Datasheet HTML 1Page - Seme LAB BFC18 Datasheet HTML 2Page - Seme LAB  
Zoom Inzoom in Zoom Outzoom out
 2 / 2 page
background image
BFC18
Characteristic
Test Conditions
Min.
Typ.
Max. Unit
Ciss
Coss
Crss
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Characteristic
Test Conditions
Min.
Typ.
Max. Unit
71
284
1.8
325
650
1300
10
19
38
Semelab plc. Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612.
Prelim. 1/94
IS
ISM
VSD
trr
Qrr
VGS = 0V , IS = – ID [Cont.]
IS = – ID [Cont.]
dls / dt = 100A/µs
Continuous Source Current (Body Diode)
Pulsed Source Current1(Body Diode)
Diode Forward Voltage2
Reverse Recovery Time
Reverse Recovery Charge
A
V
ns
µC
Characteristic
Min.
Typ.
Max. Unit
3
5
2500
70
13
LD
LS
VIsolation
CIsolation
Torque
Internal Drain Inductance (Measured From Drain Terminal to Centre of Die)
Internal Source Inductance (Measured From Source Terminals to Source Bond Pads)
RMS Voltage (50–60 Hz Sinusoidal Waveform From Terminals to Mounting Base for 1 Min.)
Drain-to-Mounting Base Capacitance
f = 1MHz
Maximum Torque for Device Mounting Screws and Electrical Terminations
nH
V
pF
in–lbs
Characteristic
Min.
Typ.
Max. Unit
0.18
0.05
RθJC
RθCS
Junction to Case
Case to Sink (Use High Efficiency Thermal Joint Compound and Planar Heat Sink Surface.)
°C/W
DYNAMIC CHARACTERISTICS
SOURCE – DRAIN DIODE RATINGS AND CHARACTERISTICS
PACKAGE CHARACTERISTICS
THERMAL CHARACTERISTICS
1) Repetitive Rating: Pulse Width limited by maximum junction temperature.
2) Pulse Test: Pulse Width < 380
µS , Duty Cycle < 2%
3) See MIL–STD–750 Method 3471
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge3
Gate – Source Charge
Gate – Drain (“Miller”) Charge
Turn–on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
VGS = 0V
VDS = 25V
f = 1MHz
VGS = 10V
VDD = 0.5 VDSS
ID = ID [Cont.] @ 25°C
VGS = 15V
VDD = 0.5 VDSS
ID = ID [Cont.] @ 25°C
RG = 0.6Ω
pF
nC
ns
11640 14000
2230
3120
800
1200
475
710
68
100
246
370
22
45
30
60
66
100
13
25
LAB
SEME
CAUTION — Electrostatic Sensitive Devices. Anti-Static Procedures Must Be Followed.



Html Pages

1 2


Scheda tecnica Scarica

Go To PDF Page


Link URL



Lei ha avuto il aiuto da alldatasheet?  [ DONATE ] 

Di alldatasheet   |   Richest di pubblicita   |   contatti   |   Privacy Policy   |   Collegamento alla scheda tecnica    |   scambio Link   |   Ricerca produttore
All Rights Reserved©Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn
Indian : Alldatasheet.in  |   Mexican : Alldatasheet.com.mx  |   British : Alldatasheet.co.uk  |   New Zealand : Alldatasheet.co.nz
Family Site : ic2ic.com  |   icmetro.com