LL4154_04 datasheet(2/5 Pages) VAISH

2 / 5 page

www.vishay.com

Document Number 85560

Rev. 1.6, 06-Apr-04

VISHAY

LL4154

Vishay Semiconductors

Electrical Characteristics

Tamb = 25 °C, unless otherwise specified

Typical Characteristics (Tamb = 25 °C unless otherwise specified)

Parameter

Test condition

Symbol

Min

Typ.

Max

Unit

Forward voltage

IF = 30 mA

Reverse current

VR = 25 V

100

VR = 25 V, Tj = 150 °C

100

µA

Breakdown voltage

IR = 5 µA, tp/T = 0.01, tp = 0.3 ms

V(BR)

Diode capacitance

VR = 0, f = 1 MHz, VHF = 50 mV

4pF

Reverse recovery time

IF = IR = 10 mA, iR = 1mA

trr

4ns

IF = 10 mA, VR = 6 V,

iR = 0.1 x IR, RL = 100 Ω

trr

2ns

Fig. 1 Reverse Current vs. Junction Temperature

Fig. 2 Forward Current vs. Forward Voltage

120

160

0.01

0.1

100

Tj - Junction Temperature ( °C)

200

94 9154

VR =25V

Scattering Limit

0.4

0.8

1.2

1.6

0.1

100

1000

V - Forward Voltage(V)

2.0

94 9152

T= 25

°C

T = 100

°C

Fig. 3 Diode Capacitance vs. Reverse Voltage

0.1

0.5

1.0

1.5

2.0

3.0

VR - Reverse Voltage(V)

100

94 9156

2.5

f=1MHz

Tj =25°C

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