STP16NF25 datasheet(3/16 Pages) STMICROELECTRONICS

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STD16NF25 - STF16NF25 - STP16NF25

Electrical ratings

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Electrical ratings

Table 2.

Absolute maximum ratings

Symbol

Parameter

Value

Unit

DPAK

TO-220

TO-220FP

VDS

Drain-source voltage (VGS = 0)

250

VGS

Gate- source voltage

± 20

Drain current (continuous) at TC = 25°C

13(1)

Limited only by maximum temperature allowed

Drain current (continuous) at TC = 100°C

8.19

8.19(1)

IDM

(2)

Pulse width limited by safe operating area.

Drain current (pulsed)

52(1)

Ptot

Total dissipation at TC = 25°C

Derating Factor

0.72

0.2

W/°C

dv/dt (3)

ISD ≤ 13A, di/dt ≤ 300A/µs, VDD ≤ 80% V(BR)DSS, Tj ≤ TJMAX

Peak diode recovery voltage slope

V/ns

VISO

Insulation withstand voltage (RMS) from

all three leads to external heat sink

(t=1s;TC=25°C)

2500

Tstg

Storage temperature

-55 to 150

°C

Max. operating junction temperature

Table 3.

Thermal data

Symbol

Parameter

Value

Unit

TO-220

DPAK

TO-220FP

Rthj-case

Thermal resistance junction-case max

1.39

°C/W

Rthj-pcb

Thermal resistance junction to pcb max

°C/W

Rthj-amb

Thermal resistance junction-ambient max

62.5

100

62.5

°C/W

Maximum lead temperature for soldering

purpose

300

°C

Table 4.

Avalanche characteristics

Symbol

Parameter

Value

Unit

IAR

Avalanche current, repetitive or not-repetitive

(pulse width limited by Tj Max)

EAS

Single pulse avalanche energy

(starting Tj=25°C, Id= 13A, Vdd=50V)

100

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