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STB160NF03L Scheda tecnica(PDF) 1 Page - STMicroelectronics

Il numero della parte STB160NF03L
Spiegazioni elettronici  N-CHANNEL 30V - 0.0021ohm - 160A D2PAK STripFET™ POWER MOSFET
PDF  9 Pages
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Produttore elettronici  STMICROELECTRONICS [STMicroelectronics]
Homepage  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STB160NF03L Scheda tecnica(HTML) 1 Page - STMicroelectronics

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February 2001
STB160NF03L
N-CHANNEL 30V - 0.0021
Ω - 160A D2PAK
STripFET™ POWER MOSFET
(1) Limited by Package
(2) ISD ≤100A, di/dt ≤300A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX.
s
TYPICAL RDS(on) = 0.0021Ω
s
LOW THRESHOLD DRIVE
s
ULTRA LOW ON-RESISTANCE
s
VERY LOW GATE CHARGE
s
100% AVALANCHE TESTED
DESCRIPTION
This Power MOSFET is the latest development of
STMicroelectronics
unique
“Single
Feature
Size
™” strip-based process. The resulting tran-
sistor shows extremely high packing density with
ultra low on-resistance, superior switching charac-
teristics and less critical alignment steps therefore
a remarkable manufacturing reproducibility. This
device is particularly suitable for high current, low
voltage switching application where efficiency is
crucial.
APPLICATIONS
s
BUCK CONVERTERS IN HIGH
PERFORMANCE TELECOM AND VRMs
s
DC-DC CONVERTERS
ABSOLUTE MAXIMUM RATINGS
(q) Pulse width limited by safe operating area
TYPE
VDSS
RDS(on)
ID
STB160NF03L
30 V
< 0.0030
Ω
160 A
Symbol
Parameter
Value
Unit
VDS
Drain-source Voltage (VGS = 0)
30
V
VDGR
Drain-gate Voltage (RGS = 20 kΩ)
30
V
VGS
Gate- source Voltage
±15
V
ID(1)
Drain Current (continuos) at TC = 25°C
160
A
ID
Drain Current (continuos) at TC = 100°C
113
A
IDM (q)
Drain Current (pulsed)
640
A
PTOT
Total Dissipation at TC = 25°C
300
W
Derating Factor
2
W/°C
EAS (2)
Single Pulse Avalanche Energy
2
J
Tstg
Storage Temperature
–65 to 175
°C
Tj
Max. Operating Junction Temperature
175
°C
D2PAK
1
3
(TO-263)
INTERNAL SCHEMATIC DIAGRAM


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