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STB16NF06L Scheda tecnica(PDF) 1 Page - STMicroelectronics

Il numero della parte STB16NF06L
Spiegazioni elettronici  N-CHANNEL 60V - 0.07 ohm - 16A D2PAK STripFET™ POWER MOSFET
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Produttore elettronici  STMICROELECTRONICS [STMicroelectronics]
Homepage  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STB16NF06L Scheda tecnica(HTML) 1 Page - STMicroelectronics

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February 2002
.
STB16NF06L
N-CHANNEL 60V - 0.07
Ω - 16A D2PAK
STripFET™ POWER MOSFET
s
TYPICAL RDS(on) = 0.07Ω
s
EXCEPTIONAL dv/dt CAPABILITY
s
LOW GATE CHARGE AT 100 oC
s
LOW THRESHOLD DRIVE
s
SURFACE-MOUNTING D2PAK (TO-263)
POWER PACKAGE IN TUBE (NO SUFFIX) OR
IN TAPE & REEL (SUFFIX “T4”)
DESCRIPTION
This Power MOSFET is the latest development of
STMicroelectronis unique "Single Feature Size™" strip-
based process. The resulting transistor shows extremely
high packing density for low on-resistance, rugged
avalanche characteristics and less critical alignment
steps
therefore
a
remarkable
manufacturing
reproducibility.
APPLICATIONS
s
MOTOR CONTROL, AUDIO AMPLIFIERS
s
HIGH CURRENT, HIGH SPEED SWITCHING
s
SOLENOID AND RELAY DRIVERS
s
DC-DC & DC-AC CONVERTERS
s
AUTOMOTIVE ENVIRONMENT
TYPE
VDSS
RDS(on)
ID
STB16NF06L
60 V
<0.09
Ω
16 A
1
3
D2PAK
TO-263
(Suffix “T4”)
ABSOLUTE MAXIMUM RATINGS
(
•) Pulse width limited by safe operating area.
(1) ISD ≤ 16A, di/dt ≤ 210A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX.
(2) Starting Tj = 25 oC, ID = 8A, VDD = 30V
Symbol
Parameter
Value
Unit
VDS
Drain-source Voltage (VGS = 0)
60
V
VDGR
Drain-gate Voltage (RGS = 20 kΩ)
60
V
VGS
Gate- source Voltage
± 16
V
ID
Drain Current (continuos) at TC = 25°C
16
A
ID
Drain Current (continuos) at TC = 100°C
11
A
IDM(•)
Drain Current (pulsed)
64
A
Ptot
Total Dissipation at TC = 25°C
45
W
Derating Factor
0.3
W/°C
dv/dt (1)
Peak Diode Recovery voltage slope
23
V/ns
EAS (2)
Single Pulse Avalanche Energy
127
mJ
Tstg
Storage Temperature
-65 to 175
°C
Tj
Max. Operating Junction Temperature
-55 to 175
°C
INTERNAL SCHEMATIC DIAGRAM


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