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STB3015 Scheda tecnica(PDF) 3 Page - STMicroelectronics

Il numero della parte STB3015
Spiegazioni elettronici  N - CHANNEL 30V - 0.013 ohm - 40A - D2PAK/TO-220 STripFETO POWER MOSFET
PDF  6 Pages
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Produttore elettronici  STMICROELECTRONICS [STMicroelectronics]
Homepage  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STB3015 Scheda tecnica(HTML) 3 Page - STMicroelectronics

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ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
td(on)
tr
Turn-on Time
Rise Time
VDD = 15 V
ID = 20 A
RG = 4.7
Ω
VGS = 5 V
25
160
ns
ns
Qg
Total Gate Charge
VDD = 24 V
ID = 40 A
VGS = 5 V
40
nC
SWITCHING OFF
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
tr(Voff)
tf
tc
Off-voltage Rise Time
Fall Time
Cross-over Time
VDD = 24 V
ID = 40 A
RG = 4.7
Ω
VGS = 5 V
25
120
155
ns
ns
ns
SOURCE DRAIN DIODE
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
ISD
ISDM(
•)
Source-drain Current
Source-drain Current
(pulsed)
40
160
A
A
VSD (
∗)
Forward On Voltage
ISD = 40 A
VGS = 0
1.3
V
trr
Qrr
IRRM
Reverse Recovery
Time
Reverse Recovery
Charge
Reverse Recovery
Current
ISD = 40 A
di/dt = 100 A/
µs
VDD = 20 V
Tj = 150
oC
50
0.9
3.5
ns
nC
A
(
∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
(
•) Pulse width limited by safe operating area
STB3015L
3/5



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