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STB50NE10 Scheda tecnica(PDF) 1 Page - STMicroelectronics

Il numero della parte STB50NE10
Spiegazioni elettronici  N - CHANNEL 100V - 0.02ohm - 50A - D2PAK STripFET] POWER MOSFET
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Produttore elettronici  STMICROELECTRONICS [STMicroelectronics]
Homepage  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STB50NE10 Scheda tecnica(HTML) 1 Page - STMicroelectronics

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STB50NE10
N - CHANNEL 100V - 0.021
Ω - 50A - D2PAK
STripFET
™ POWER MOSFET
s
TYPICAL RDS(on) = 0.021
Ω
s
EXCEPTIONAL dv/dt CAPABILITY
s
100% AVALANCHE TESTED
s
LOW GATE CHARGE AT 100
oC
s
APPLICATION ORIENTED
CHARACTERIZATION
s
FOR THROUGH-HOLE VERSION CONTACT
SALES OFFICE
DESCRIPTION
This Power MOSFET is the latest development of
STMicroelectronics
unique
”Single
Feature
Size
™” strip-based
process. The resulting
transistor shows extremely high packing density
for
low
on-resistance,
rugged
avalanche
characteristics and less critical alignment steps
therefore
a
remarkable
manufacturing
reproducibility.
APPLICATIONS
s
HIGH CURRENT, HIGH SPEED SWITCHING
s
SOLENOID AND RELAY DRIVERS
s
MOTOR CONTROL, AUDIO AMPLIFIERS
s
DC-DC & DC-AC CONVERTERS
s
AUTOMOTIVE ENVIRONMENT
®
INTERNAL SCHEMATIC DIAGRAM
December 1998
1
3
D
2PAK
TO-263
(suffix ”T4”)
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
Un it
VDS
Drain-source Voltage (VGS = 0)
100
V
VDGR
Drain- gate Voltage (RGS =20 k
Ω)
100
V
VGS
G ate-source Volt age
± 20
V
ID
Drain Current (continuous) at Tc =25
oC50
A
ID
Drain Current (continuous) at Tc =100
oC35
A
IDM (
•)
Drain Current (pulsed)
200
A
Ptot
T otal Dissipat ion at Tc =25
oC
150
W
Derating Factor
1
W /
o C
dv/dt (1)
Peak Diode Recovery voltage slope
6
V/ns
Tstg
Storage Temperature
-65 to 175
o C
Tj
Max. Operating Junction Temperature
175
o C
(
•) Pulse width limited by safe operating area
( 1)ISD
≤ 50 A, di/dt ≤ 300 A/µs, VDD ≤ V(BR)DSS,Tj ≤ TJMAX
TYPE
VDSS
RDS(on)
ID
STB50NE10
100 V
<0.027
Ω
50 A
1/8


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