Motore di ricerca datesheet componenti elettronici
  Italian  ▼
ALLDATASHEETIT.COM

X  

Preview PDF HTML

STB55NF06 Scheda tecnica(PDF) 3 Page - STMicroelectronics

Il numero della parte STB55NF06
Spiegazioni elettronici  N-CHANNEL 60V - 0.015 ohm - 50A TO-220/TO-220FP/I PAK/D²PAK STripFET™ II POWER MOSFET
PDF  12 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
Produttore elettronici  STMICROELECTRONICS [STMicroelectronics]
Homepage  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STB55NF06 Scheda tecnica(HTML) 3 Page - STMicroelectronics

  STB55NF06 Datasheet HTML 1Page - STMicroelectronics STB55NF06 Datasheet HTML 2Page - STMicroelectronics STB55NF06 Datasheet HTML 3Page - STMicroelectronics STB55NF06 Datasheet HTML 4Page - STMicroelectronics STB55NF06 Datasheet HTML 5Page - STMicroelectronics STB55NF06 Datasheet HTML 6Page - STMicroelectronics STB55NF06 Datasheet HTML 7Page - STMicroelectronics STB55NF06 Datasheet HTML 8Page - STMicroelectronics STB55NF06 Datasheet HTML 9Page - STMicroelectronics Next Button
Zoom Inzoom in Zoom Outzoom out
 3 / 12 page
background image
3/12
STB50NF06 STB55NF06-1 STP55NF06 STP55NF06FP
SWITCHING ON
SWITCHING OFF
SOURCE DRAIN DIODE
(*)Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
(
•)Pulse width limited by safe operating area.
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
td(on)
tr
Turn-on Delay Time
Rise Time
VDD = 30 V
ID = 27.5 A
RG = 4.7 Ω
VGS = 10 V
(Resistive Load, Figure 3)
16
8
ns
ns
Qg
Qgs
Qgd
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
VDD= 48 V ID= 55 A VGS= 10V
44.5
10.5
17.5
60
nC
nC
nC
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
td(off)
tf
Turn-off Delay Time
Fall Time
VDD = 30V
ID = 27.5 A
RG = 4.7Ω,
VGS = 10 V
(Resistive Load, Figure 3)
36
15
ns
ns
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
ISD
ISDM (•)
Source-drain Current
Source-drain Current (pulsed)
50
200
A
A
VSD (*)
Forward On Voltage
ISD = 55A
VGS = 0
1.5
V
trr
Qrr
IRRM
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
ISD = 55 A
di/dt = 100A/µs
VDD = 30 V
Tj = 150°C
(see test circuit, Figure 5)
75
170
4.5
ns
nC
A
ELECTRICAL CHARACTERISTICS (continued)
Safe Operating Area for TO-220FP
Safe Operating Area for



Html Pages

1 2 3 4 5 6 7 8 9 10 11 12


Scheda tecnica Scarica

Go To PDF Page


Link URL



Lei ha avuto il aiuto da alldatasheet?  [ DONATE ] 

Di alldatasheet   |   Richest di pubblicita   |   contatti   |   Privacy Policy   |   Collegamento alla scheda tecnica    |   scambio Link   |   Ricerca produttore
All Rights Reserved©Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn
Indian : Alldatasheet.in  |   Mexican : Alldatasheet.com.mx  |   British : Alldatasheet.co.uk  |   New Zealand : Alldatasheet.co.nz
Family Site : ic2ic.com  |   icmetro.com