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STB7NB40 Scheda tecnica(PDF) 3 Page - STMicroelectronics

Il numero della parte STB7NB40
Spiegazioni elettronici  N - CHANNEL ENHANCEMENT MODE PowerMESH MOSFET
PDF  6 Pages
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Produttore elettronici  STMICROELECTRONICS [STMicroelectronics]
Homepage  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STB7NB40 Scheda tecnica(HTML) 3 Page - STMicroelectronics

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ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
Symb ol
Parameter
Test Cond ition s
Mi n.
Typ .
Max.
Un it
td(on)
tr
Turn-on Time
Rise Time
VDD =200 V
ID =3.5 A
RG =47
Ω
VGS =10 V
(see test circuit, figure 3)
11. 5
7.5
16
11
ns
ns
Qg
Qgs
Qgd
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
VDD =320 V
ID =7 A
VGS =10 V
21
7.3
8.5
30
nC
nC
nC
SWITCHING OFF
Symb ol
Parameter
Test Cond ition s
Mi n.
Typ .
Max.
Un it
tr(Voff)
tf
tc
Of f-voltage Rise Time
Fall Time
Cross-over Time
VDD =320 V
ID =7 A
RG =4.7
Ω VGS =10 V
(see test circuit, figure 5)
9.5
9
16. 5
15
14
25
ns
ns
ns
SOURCE DRAIN DIODE
Symb ol
Parameter
Test Cond ition s
Mi n.
Typ .
Max.
Un it
ISD
ISDM (
•)
Source-drain Current
Source-drain Current
(pulsed)
7
28
A
A
VSD (
∗)
Forward On Voltage
ISD =7 A
VGS =0
1.6
V
trr
Qrr
IRRM
Reverse Recovery
Time
Reverse Recovery
Charge
Reverse Recovery
Current
ISD = 7 A
di/dt = 100 A/
µs
VDD =100 V
Tj =150
oC
(see test circuit, figure 5)
300
2
13. 7
ns
µC
A
(
∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
(
•) Pulse width limited by safe operating area
STB7NB40
3/6



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