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STB80PF55 Scheda tecnica(PDF) 3 Page - STMicroelectronics

Il numero della parte STB80PF55
Spiegazioni elettronici  P-CHANNEL 55V - 0.016 ohm - 80A D2PAK STripFET™ II POWER MOSFET
PDF  7 Pages
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Produttore elettronici  STMICROELECTRONICS [STMicroelectronics]
Homepage  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STB80PF55 Scheda tecnica(HTML) 3 Page - STMicroelectronics

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STB80PF55
SWITCHING ON (*)
SWITCHING OFF (*)
SOURCE DRAIN DIODE (*)
(*) Pulse width
[ 300 µs, duty cycle 1.5 %.
(
•) Pulse width limited by T
JMAX
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
td(on)
tr
Turn-on Delay Time
Rise Time
VDD = 25 V
ID = 40 A
RG = 4.7 Ω
VGS = 10 V
(Resistive Load, Figure 3)
35
190
ns
ns
Qg
Qgs
Qgd
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
VDD= 25 V ID = 80 A VGS= 10V
190
27
65
258
nC
nC
nC
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
td(off)
tf
Turn-off Delay Time
Fall Time
VDD = 25 V
ID = 40 A
RG = 4.7 Ω
VGS = 10 V
(Resistive Load, Figure 3)
165
80
ns
ns
tr(Voff)
tf
tc
Off-voltage Rise Time
Fall Time
Cross-over Time
Vclamp = 40 V
ID = 80 A
RG = 4.7 Ω
VGS = 10 V
(Inductive Load, Figure 5)
60
40
85
ns
ns
ns
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
ISD
ISDM (•)
Source-drain Current
Source-drain Current (pulsed)
80
320
A
A
VSD (*)
Forward On Voltage
ISD = 80 A
VGS = 0
1.3
V
trr
Qrr
IRRM
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
ISD = 80 A
di/dt = 100A/µs
VDD = 25 V
Tj = 150°C
(see test circuit, Figure 5)
110
495
9
ns
nC
A
ELECTRICAL CHARACTERISTICS (continued)



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