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STP85NF55L Scheda tecnica(PDF) 1 Page - STMicroelectronics |
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STP85NF55L Scheda tecnica(HTML) 1 Page - STMicroelectronics |
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1 / 10 page  1/10 September 2002 STB85NF55L STP85NF55L N-CHANNEL 55V - 0.0060 Ω - 80A D2PAK/TO-220 STripFET™ II POWER MOSFET s TYPICAL RDS(on) = 0.0060 Ω s LOW THRESHOLD DRIVE s LOGIC LEVEL DEVICE DESCRIPTION This Power MOSFET is the latest development of STMicroelectronis unique "Single Feature Size™" strip-based process. The resulting transistor shows extremely high packing density for low on- resistance, rugged avalanche characteristics and less critical alignment steps therefore a remark- able manufacturing reproducibility. APPLICATIONS s SOLENOID AND RELAY DRIVERS s MOTOR CONTROL, AUDIO AMPLIFIERS s DC-DC CONVERTERS s AUTOMOTIVE ENVIRONMENT TYPE VDSS RDS(on) ID STP85NF55L STB85NF55L 55 V 55 V <0.008 Ω <0.008 Ω 80 A 80 A 1 2 3 TO-220 1 3 D2PAK TO-263 (Suffix “T4”) ADD SUFFIX “T4” FOR ORDERING IN TAPE & REEL Ordering Information ABSOLUTE MAXIMUM RATINGS ( •) Current Limited by Package. ( ••) Pulse width limited by safe operating area. 1) ISD ≤80A, di/dt ≤300A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX (2) Starting Tj = 25 oC, ID = 40A, VDD = 30V SALES TYPE MARKING PACKAGE PACKAGING STP85NF55L STB85NF55L STB85NF55LT4 P85NF55L B85NF55L B85NF55L TO-220 D2PAK D2PAK TUBE TUBE TAPE & REEL Symbol Parameter Value Unit VDS Drain-source Voltage (VGS = 0) 55 V VDGR Drain-gate Voltage (RGS = 20 kΩ) 55 V VGS Gate- source Voltage ± 15 V ID(•) Drain Current (continuous) at TC = 25°C 80 A ID Drain Current (continuous) at TC = 100°C 80 A IDM(••) Drain Current (pulsed) 320 A Ptot Total Dissipation at TC = 25°C 300 W Derating Factor 2.0 W/°C dv/dt (1) Peak Diode Recovery voltage slope 10 V/ns EAS (2) Single Pulse Avalanche Energy 980 mJ Tstg Storage Temperature -55 to 175 °C Tj Max. Operating Junction Temperature INTERNAL SCHEMATIC DIAGRAM |
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