2N3771 datasheet(1/4 Pages) STMICROELECTRONICS

Il numero della parte	2N3771

Spiegazioni elettronici	HIGH POWER NPN SILICON TRANSISTOR

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2N3771

2N3772

HIGH POWER NPN SILICON TRANSISTOR

s

STMicroelectronics PREFERRED

SALESTYPES

DESCRIPTION

The 2N3771, 2N3772 are silicon epitaxial-base

NPN transistors mounted in Jedec Jedec TO-3

metal

case.

They

are

intended

for

linear

amplifiers and inductive switching applications.

INTERNAL SCHEMATIC DIAGRAM

December 2000

1

2

TO-3

ABSOLUTE MAXIMUM RATINGS

Symbol

Parameter

Value

Unit

2N3771

2N3772

VCEO

Collector-Emitter Voltage (IE = 0)

40

60

V

VCEV

Collector-Emitter Voltage (VBE = -1.5V)

50

80

V

VCBO

Collector-Base Voltage (IB = 0)

50

100

V

VEBO

Emitter-Base Voltage (IC = 0)

5

7

V

IC

Collector Current

30

20

A

ICM

Collector Peak Current

30

A

IB

Base Current

7.5

5

A

IBM

Base Peak Current

15

A

Ptot

Total Dissipation at Tc

≤ 25 oC

150

W

Tstg

Storage Temperature

-65 to 200

oC

®

1/4

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