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2STC4467 Scheda tecnica(PDF) 1 Page - STMicroelectronics |
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2STC4467 Scheda tecnica(HTML) 1 Page - STMicroelectronics |
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1 / 7 page ![]() April 2008 Rev 2 1/7 7 2STC4467 High power NPN epitaxial planar bipolar transistor Features ■ High breakdown voltage VCEO = 120 V ■ Complementary to 2STA1694 ■ Fast-switching speed ■ Typical ft = 20 MHz ■ Fully characterized at 125 oC Applications ■ Audio power amplifier Description The device is a NPN transistor manufactured using new BiT-LA (Bipolar transistor for linear amplifier) technology. The resulting transistor shows good gain linearity behaviour. Table 1. Device summary Figure 1. Internal schematic diagram TO-3P 1 2 3 Order code Marking Package Packaging 2STC4467 2STC4467 TO-3P Tube www.st.com |
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