MJD117 datasheet(2/6 Pages) STMICROELECTRONICS

Il numero della parte	MJD117

Spiegazioni elettronici	COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS

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Produttore elettronici	STMICROELECTRONICS [STMicroelectronics]

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THERMAL DATA

Rthj-case

Rthj-amb

Thermal Resistance Junction-case

Max

Thermal Resistance Junction-ambient

Max

6.25

100

oC/W

ELECTRICAL CHARACTERISTICS (Tcase = 25

oC unless otherwise specified)

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

ICBO

Collector Cut-off

Current (IE = 0)

VCB = 100 V

VCB = 80 V

0.02

0.01

ICEO

Collector Cut-off

Current (IB = 0)

VCE = 50 V

0.02

ICEX

Collector Cut-off

Current

(VBE = -1.5V)

VCE = 80 V

Tc = 125

0.01

0.5

IEBO

Emitter Cut-off Current

(IC = 0)

VEB = 5 V

VCEO(sus)

∗ Collector-Emitter

Sustaining Voltage

(IB = 0)

IC = 30 mA

100

VCE(sat)

∗ Collector-Emitter

Saturation Voltage

IC = 2 A

IB = 8 mA

IC = 4 A

IB = 40 mA

VBE(sat)

∗ Base-Emitter

Saturation Voltage

IC = 4 A

IB = 40 mA

VBE(on)

∗ Base-Emitter On

Voltage

IC = 2 A

VCE = 3 V

2.8

hFE

∗

DC Current Gain

IC = 0.5 A

VCE = 3 V

IC = 2 A

VCE = 3 V

IC = 4 A

VCE = 3 V

500

1000

200

12000

∗ Pulsed: Pulse duration = 300 µs, duty cycle ≤ 2 %

For PNP types voltage and current values are negative.

Safe Operating Areas

Derating Curve

MJD112/MJD117

2/6

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