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STD10NF06L Scheda tecnica(PDF) 1 Page - STMicroelectronics |
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STD10NF06L Scheda tecnica(HTML) 1 Page - STMicroelectronics |
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1 / 7 page ![]() 1/7 PRELIMINARY DATA November 2001 This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice. STD10NF06L N-CHANNEL 60V - 0.1 Ω - 10A DPAK STripFET™ POWER MOSFET (1) ISD ≤10A, di/dt ≤400A/µs, VDD =48V, Tj ≤ TJMAX. (2) Starting Tj = 25°C, Id = 7A, VDD=20 V s TYPICAL RDS(on) = 0.1Ω s SURFACE-MOUNTING DPAK (TO-252) POWER PACKAGE IN TAPE & REEL (SUFFIX “T4”) DESCRIPTION This MOSFET series realized with STMicroelectronics unique STripFET ™ process has specifically been de- signed to minimize input capacitance and gate charge. It is therefore suitable as primary switch in advanced high-efficiency, high-frequency isolated DC-DC con- verters for Telecom and Computer applications. It is also intended for any applications with low gate drive requirements. APPLICATIONS s DC-DC & DC-AC CONVERTERS s DC MOTOR CONTROL ABSOLUTE MAXIMUM RATINGS (q) Pulse width limited by safe operating area TYPE VDSS RDS(on) ID STD10NF06L 60V <0.12 Ω 10A Symbol Parameter Value Unit VDS Drain-source Voltage (VGS = 0) 60 V VDGR Drain-gate Voltage (RGS = 20 kΩ) 60 V VGS Gate- source Voltage ± 15 V ID Drain Current (continuos) at TC = 25°C 10 A ID Drain Current (continuos) at TC = 100°C 7A IDM (l) Drain Current (pulsed) 40 A PTOT Total Dissipation at TC = 25°C 30 W Derating Factor 0.2 W/°C dv/dt (1) Peak Diode Recovery voltage slope 30 V/ns EAS (2) Single Pulse Avalanche Energy 50 mJ Tstg Storage Temperature – 55 to 175 °C Tj Max. Operating Junction Temperature DPAK 1 3 INTERNAL SCHEMATIC DIAGRAM |
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