CHA5294

30-40GHz Medium Power Amplifier

Ref. : DSCHA52948205 - 23 Jul 08

2/6

Specifications subject to change without notice

Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE

Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09

Electrical Characteristics on wafer (1)

Tamb = +25°C

Symbol

Parameter

Min

Typ

Max

Unit

Fop

Operating frequency range

30

40

GHz

G

Small signal gain from 30 to 34GHz

from 34 to 40GHz

24.5

23

dB

∆G

Small signal gain flatness

±1.5

dB

Is

Reverse isolation

40

dB

P1dB

Pulsed output power at 1dB compression from 30 to 34GHz

from 34 to 40GHz

23

22

dBm

Psat

Saturated power from 30 to 34GHz

from 34 to 40GHz

24.5

23

dBm

IP3

Output Intercept point 3rd order from 30 to 34GHz

from 34 to 40GHz

30

28

dBm

VSWRin

Input VSWR

2.0:1

VSWRout

Output VSWR

4.0:1

Vd

Drain bias DC voltage

3.5

V

Id

Bias current @ small signal

500

650

mA

(1) These values are representative for pulsed on-wafer measurements that are made without

bonding wires at the RF ports.

Absolute Maximum Ratings

Tamb. = 25°C (1)

Symbol

Parameter

Values

Unit

Vd

Maximum Drain bias voltage with Pin max= -2dBm

+4.0

V

Id

Drain bias current with Vd=3.5V in small signal

700

mA

Vg

Gate bias voltage

-2 to +0.4

V

Pin

Maximum peak input power overdrive with Vd=3.5V (2)

+6.0

dBm

Tch

Maximum channel temperature

+175

°C

Ta

Operating temperature range

-40 to +80

°C

Tstg

Storage temperature range

-55 to +125

°C

(1) Operation of this device above anyone of these parameters may cause permanent damage.

(2) Duration < 1s.