STD40NF3LL datasheet(1/6 Pages) STMICROELECTRONICS

Il numero della parte	STD40NF3LL

Spiegazioni elettronici	N-CHANNEL 30V - 0.0095 ohm - 40A DPAK LOW GATE CHARGE STripFET POWER MOSFET

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Produttore elettronici	STMICROELECTRONICS [STMicroelectronics]

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STD40NF3LL

N-CHANNEL 30V - 0.0095

Ω - 40A DPAK

LOW GATE CHARGE STripFET

™ POWER MOSFET

PRELIMINARY DATA

s

TYPICAL RDS(on) = 0.0115

Ω @ 4.5V

s

OPTIMAL RDS(on) xQg TRADE-OFF @ 4.5V

s

CONDUCTION LOSSES REDUCED

s

SWITCHING LOSSES REDUCED

DESCRIPTION

This application specific Power Mosfet is the third

generation of STMicroelectronics unique ”Single

Feature Size

™” strip-based process. The resul-

ting transistor shows the best trade-off between

on-resistance and gate charge. When used as

high and low side in buck regulators, it gives the

best performance in terms of both conduction and

switching losses. This is extremely important for

motherboards where fast switching and high effi-

ciency are of paramount importance.

APPLICATIONS

s

SPECIFICALLY DESIGNED AND

OPTIMISED FOR HIGH EFFICIENCY CPU

CORE DC/DC CONVERTERS

®

INTERNAL SCHEMATIC DIAGRAM

May 2000

ABSOLUTE MAXIMUM RATINGS

Symbol

Parameter

Value

Un it

VDS

Drain-source Voltage (VGS =0)

30

V

VDGR

Drain- gate Voltage (RGS =20 k

Ω)30

V

VGS

G ate-source Volt age

± 15

V

ID

Drain Current (continuous) at Tc =25

oC40

A

ID

Drain Current (continuous) at Tc =100

oC28

A

IDM (

•)

Drain Current (pulsed)

160

A

Ptot

T otal Dissipat ion at Tc =25

oC55

W

Derating Factor

0.37

W /

o C

Tstg

Storage Temperature

-65 to 175

o C

Tj

Max. Operating Junction Temperature

175

o C

(

•) Pulse width limited by safe operating area

T YPE

VDSS

RDS(on )

ID

STD40NF3LL

30 V

< 0.0115

Ω

40 A

ADD SUFFIX ”T4” FOR ORDERING IN TAPE & REEL

1

3

DPAK

TO-252

(Suffix ”T4”)

1/6

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