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STD60NF3LL Scheda tecnica(PDF) 1 Page - STMicroelectronics

Il numero della parte STD60NF3LL
Spiegazioni elettronici  N-CHANNEL 30V - 0.0075ohm - 60A DPAK STripFET™ II POWER MOSFET
PDF  9 Pages
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Produttore elettronici  STMICROELECTRONICS [STMicroelectronics]
Homepage  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

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April 2002
STD60NF3LL
N-CHANNEL 30V - 0.0075
Ω - 60A DPAK
STripFET™ II POWER MOSFET
(1) Starting Tj=25°C, ID=30A, VDD=27.5V
s
TYPICAL RDS(on) = 0.0075Ω
s
OPTIMAL RDS(ON) x Qg TRADE-OFF @ 4.5V
s
CONDUCTION LOSSES REDUCED
s
SWITCHING LOSSES REDUCED
s
ADD SUFFIX “T4” FOR ORDERING IN TAPE &
REEL
DESCRIPTION
This application specific Power Mosfet is the third
genaration of STMicroelectronics unique “Single
Feature Size
™” strip-based process. The result-
ing transistor shows the best trade-off between on-
resistance ang gate charge. When used as high
and low side in buck regulators, it gives the best
performance in terms of both conduction and
switching losses. This is extremely important for
motherboards where fast switching and high effi-
ciency are of paramount importance.
APPLICATIONS
s
SPECIFICALLY DESIGNED AND OPTIMISED
FOR HIGH EFFICIENCY DC/DC
CONVERTERS
ABSOLUTE MAXIMUM RATINGS
(q) Pulse width limited by safe operating area
TYPE
VDSS
RDS(on)
ID
STD60NF3LL
30V
<0.0095
Ω
60A
Symbol
Parameter
Value
Unit
VDS
Drain-source Voltage (VGS = 0)
30
V
VDGR
Drain-gate Voltage (RGS = 20 kΩ)
30
V
VGS
Gate- source Voltage
± 16
V
ID
Drain Current (continuos) at TC = 25°C
60
A
ID
Drain Current (continuos) at TC = 100°C
43
A
IDM (l)
Drain Current (pulsed)
240
A
PTOT
Total Dissipation at TC = 25°C
100
W
Derating Factor
0.67
W/°C
EAS (1)
Single Pulse Avalanche Energy
700
mJ
Tstg
Storage Temperature
– 55 to 175
°C
Tj
Operating Junction Temperature
DPAK
1
3
TO-252
INTERNAL SCHEMATIC DIAGRAM


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