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STD60NF55L Scheda tecnica(PDF) 1 Page - STMicroelectronics

Il numero della parte STD60NF55L
Spiegazioni elettronici  N-CHANNEL 55V - 0.012ohm - 60A DPAK STripFET™ II POWER MOSFET
PDF  9 Pages
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Produttore elettronici  STMICROELECTRONICS [STMicroelectronics]
Homepage  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STD60NF55L Scheda tecnica(HTML) 1 Page - STMicroelectronics

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April 2002
STD60NF55L
N-CHANNEL 55V - 0.012
Ω - 60A DPAK
STripFET™ II POWER MOSFET
(1)ISD ≤40A, di/dt ≤350A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX.
(2) Starting Tj=25°C, ID=30A, VDD=20V
s
TYPICAL RDS(on) = 0.012Ω
s
LOW THRESHOLD DRIVE
s
ADD SUFFIX “T4” FOR ORDERING IN TAPE &
REEL
DESCRIPTION
This Power Mosfet is the latest development of
STMicroelectronics
unique
“Single
Feature
Size
™” strip-based process. The resulting tran-
sistor shows extremely high packing density for
low on-resistance, rugged avalance characteris-
tics and less critical alignment steps therefore a re-
markable manufacturing reproducibility..
APPLICATIONS
s
AUTOMOTIVE
s
MOTOR CONTROL
ABSOLUTE MAXIMUM RATINGS
(q) Pulse width limited by safe operating area
TYPE
VDSS
RDS(on)
ID
STD60NF55L
55V
< 0.015
Ω
60A
Symbol
Parameter
Value
Unit
VDS
Drain-source Voltage (VGS = 0)
55
V
VDGR
Drain-gate Voltage (RGS = 20 kΩ)
55
V
VGS
Gate- source Voltage
± 15
V
ID
Drain Current (continuous) at TC = 25°C
60
A
ID
Drain Current (continuous) at TC = 100°C
42
A
IDM (l)
Drain Current (pulsed)
240
A
PTOT
Total Dissipation at TC = 25°C
110
W
Derating Factor
0.73
W/°C
dv/dt (1)
Peak Diode Recovery voltage slope
16
V/ns
EAS (2)
Single Pulse Avalanche Energy
400
mJ
Tstg
Storage Temperature
– 55 to 175
°C
Tj
Operating Junction Temperature
DPAK
1
3
TO-252
INTERNAL SCHEMATIC DIAGRAM


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