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STDID5B Scheda tecnica(PDF) 1 Page - STMicroelectronics

Il numero della parte STDID5B
Spiegazioni elettronici  N - CHANNEL 55V - 0.1 ohm - 12A TO-252 STripFET POWER MOSFET
PDF  6 Pages
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Produttore elettronici  STMICROELECTRONICS [STMicroelectronics]
Homepage  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STDID5B Scheda tecnica(HTML) 1 Page - STMicroelectronics

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STDID5B
N - CHANNEL 55V - 0.1
Ω - 12A TO-252
STripFET
™ POWER MOSFET
PRELIMINARY DATA
s
TYPICAL RDS(on) = 0.1
Ω
s
APPLICATION ORIENTED
CHARACTERIZATION
s
ADD SUFFIX "T4" FOR ORDERING IN TAPE
& REEL
DESCRIPTION
This Power MOSFET is the latest development of
STMicroelectronics
unique
"Single
Feature
Size
™" strip-based process. The resulting transi-
stor shows extremely high packing density for low
on-resistance, rugged avalanche characteristics
and less critical alignment steps therefore a re-
markable manufacturing reproducibility.
APPLICATIONS
s
DC MOTOR CONTROL
s
DC-DC & DC-AC CONVERTERS
®
INTERNAL SCHEMATIC DIAGRAM
May 2000
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
Unit
VDS
Drain-source Voltage (VGS = 0)
55
V
VDGR
Drain- gate Voltage (RGS = 20 k
Ω)55
V
VGS
Gate-source Voltage
± 20
V
ID(*)
Drain Current (continuous) at Tc = 25
oC12
A
ID
Drain Current (continuous) at Tc = 100
oC8
A
IDM(
•)
Drain Current (pulsed)
48
A
Ptot
Total Dissipation at Tc = 25
o C35
W
Derating Factor
0.23
W/
oC
EAS
(1)
Single Pulse Avalanche Energy
25
mJ
Tstg
Storage Temperature
-65 to 175
oC
Tj
Max. Operating Junction Temperature
175
oC
(
•) Pulse width limited by safe operating area
(1) starting Tj = 25
oC, ID =12A , VDD = 30V
New RDS(on) spec. starting from July ’98
TYPE
VDSS
RDS(on)
ID
STDID5B
55 V
< 0.12
Ω
12 A
1
3
DPAK
TO-252
(Suffix "T4")
1/6


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