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L6386ED Scheda tecnica(PDF) 6 Page - STMicroelectronics |
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L6386ED Scheda tecnica(HTML) 6 Page - STMicroelectronics |
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6 / 18 page ![]() Electrical characteristics L6386E 6/18 Symbol Pin Parameter Test condition Min Typ Max Unit Driving buffers section Iso 9, 13 High/low side source short circuit current VIN = Vih (tp < 10µs) 300 400 mA Isi 9, 13 High/low side sink short circuit current VIN = Vil (tp < 10µs) 500 650 mA Logic inputs Vil 1,2, 3 Low level logic threshold voltage 1.5 V Vih High level logic threshold voltage 3.6 V Iih High level logic input current VIN = 15V 50 70 µA Iil Low level logic input current VIN = 0V 1 µA Sense comparator Vio Input offset voltage -10 10 mV Iio 6 Input bias current Vcin ≥ 0.5 0.2 µA Vol 2 Open drain low level output voltage Iod = -2.5mA 0.8 V Vref Comparator reference voltage 0.46 0.5 0.54 V 1. RDS(on) is tested in the following way: where I1 is pin 8 current when VCBOOT = VCBOOT1, I2 when VCBOOT = VCBOOT2 Table 6. DC operation electrical characteristcs (continued)(VCC = 15V; TJ = 25°C) R DSON V CC V CBOOT1 – () V CC V CBOOT2 – () – I 1 VCC,VCBOOT1 () I 2 VCC,VCBOOT2 () – ------------------------------------------------------------------------------------------------------- = |
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