STTH310_07 datasheet(2/7 Pages) STMICROELECTRONICS

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Characteristics

STTH310

2/7

Characteristics

To evaluate the conduction losses use the following equation: P = 1.20 x IF(AV) + 0.075 IF

(RMS)

Table 1.

Absolute ratings (limiting values)

Symbol

Parameter

Value

Unit

VRRM

Repetitive peak reverse voltage

1000

IF(AV)

Average forward current,

δ = 0.5

TL = 75° C δ = 0.5

DO-201AD

TL = 75° C δ = 0.5

SMC

IFSM

Forward surge current

tp = 8.3 ms

Sinusoidal

DO-201AD

SMC

Tstg

Storage temperature range

- 50 to + 175

°C

Maximum operating junction temperature

+ 175

°C

Table 2.

Thermal parameters

Symbol

Parameter

Value

Unit

Rth(j-l)

Junction to lead

L = 10 mm

DO-201AD

°C/W

SMC

Rth(j-a)

Junction to ambient

L = 10 mm

DO-201AD

Table 3.

Static electrical characteristics

Symbol

Parameter

Test conditions

Min.

Typ

Max.

Unit

Reverse leakage current

Tj = 25° C

VR = VRRM

µA

Tj = 125° C

Forward voltage drop

Tj = 25° C

IF = 3 A

1.7

Tj = 150° C

0.98

1.42

Table 4.

Dynamic electrical characteristics

Symbol

Parameter

Test conditions

Min.

Typ

Max.

Unit

trr

Reverse recovery time

IF = 0.5 A

Irr = 0.25 A

IR = 1 A

Tj = 25° C

tfr

Forward recovery time

IF = 3 A

dIF/dt = 50 A/µs

VFR = 1.1 x VFmax

Tj = 25° C

300

VFP

Forward recovery voltage

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