STN2N06 datasheet(1/5 Pages) STMICROELECTRONICS

Il numero della parte	STN2N06

Spiegazioni elettronici	N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR

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STN2N06

N - CHANNEL ENHANCEMENT MODE

POWER MOS TRANSISTOR

ADVANCE DATA

s

TYPICAL RDS(on) = 0.21

Ω

s

AVALANCHE RUGGED TECHNOLOGY

s

SOT-223 CAN BE WAVE OR REFLOW

SOLDERED

s

AVAILABLE IN TAPE AND REEL ON

REQUEST

s

150

oC OPERATING TEMPERATURE

s

APPLICATION ORIENTED

CHARACTERIZATION

APPLICATIONS

s

HARD DISK DRIVERS

s

SMALL MOTOR CURRENT SENSE

CIRCUITS

s

DC-DC CONVERTERS AND POWER

SUPPLIES

INTERNAL SCHEMATIC DIAGRAM

ABSOLUTE MAXIMUM RATINGS

Symbol

Parameter

Value

Unit

VDS

Drain-source Voltage (VGS = 0)

60

V

VDGR

Drain- gate Voltage (RGS = 20 k

Ω)60

V

VGS

Gate-source Voltage

± 20

V

ID(*)

Drain Current (continuous) at Tc = 25

oC2

A

ID(*)

Drain Current (continuous) at Tc = 100

o C

1.3

A

IDM(

•)

Drain Current (pulsed)

8

A

Ptot

Total Dissipation at Tc = 25

o C

2.7

W

Derating Factor

0.022

W/

oC

Tstg

Storage Temperature

-65 to 150

oC

Tj

Max. Operating Junction Temperature

150

oC

(

•) Pulse width limited by safe operating area (*) Limited by package

TYPE

VDSS

RDS(on)

IDCONT

STN2N06

60 V

< 0.250

Ω

2 A

March 1996

1

2

3

SOT-223

1/5

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