STN3NF06L datasheet(1/8 Pages) STMICROELECTRONICS

Il numero della parte	STN3NF06L

Spiegazioni elettronici	N-CHANNEL 60V - 0.07ohm - 4A SOT-223 STripFET™ II POWER MOSFET

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December 2002

.

STN3NF06L

N-CHANNEL 60V - 0.07

Ω - 4A SOT-223

STripFET™ II POWER MOSFET

s

TYPICAL RDS(on) = 0.07 Ω

s

EXCEPTIONAL dv/dt CAPABILITY

s

AVALANCHE RUGGED TECHNOLOGY

s

100% AVALANCHE TESTED

s

LOW THRESHOLD DRIVE

DESCRIPTION

This Power MOSFET is the latest development of

STMicroelectronis unique "Single Feature Size™"

strip-based

process.

The

resulting

transistor

shows extremely high packing density for low on-

resistance, rugged avalanche characteristics and

less critical alignment steps therefore a remark-

able manufacturing reproducibility.

APPLICATIONS

s

DC-DC & DC-AC COVERTERS

s

DC MOTOR CONTROL (DISK DRIVERS, etc.)

s

SYNCHRONOUS RECTIFICATION

TYPE

VDSS

RDS(on)

ID

STN3NF06L

60 V

< 0.1

Ω

4 A

1

2

3

SOT-223

INTERNAL SCHEMATIC DIAGRAM

ABSOLUTE MAXIMUM RATINGS

(

••) Pulse width limited by safe operating area.

(

•) Current limited by the package

(1) ISD ≤ 3A, di/dt ≤150A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX

(2) Starting Tj = 25 oC, ID = 4A, VDD = 30V

Symbol

Parameter

Value

Unit

VDS

Drain-source Voltage (VGS = 0)

60

V

VDGR

Drain-gate Voltage (RGS = 20 kΩ)

60

V

VGS

Gate- source Voltage

± 16

V

ID(•)

Drain Current (continuous) at TC = 25°C

4A

ID

Drain Current (continuous) at TC = 100°C

2.9

A

IDM(••)

Drain Current (pulsed)

16

A

Ptot

Total Dissipation at TC = 25°C

3.3

W

Derating Factor

0.026

W/°C

dv/dt (1)

Peak Diode Recovery voltage slope

10

V/ns

EAS (2)

Single Pulse Avalanche Energy

200

mJ

Tstg

Storage Temperature

-55 to 150

°C

Tj

Operating Junction Temperature

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