STP24NF10 datasheet(3/6 Pages) STMICROELECTRONICS

Il numero della parte	STP24NF10

Spiegazioni elettronici	N - CHANNEL 100V - 0.07ohm - 24A TO-220 LOW GATE CHARGE STripFET POWER MOSFET

PDF	6 Pages

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Produttore elettronici	STMICROELECTRONICS [STMicroelectronics]

Homepage	http://www.st.com

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3 / 6 page

ELECTRICAL CHARACTERISTICS (continued)

SWITCHING ON

Symbo l

Parameter

Test Con ditions

Min.

Typ.

Max.

Unit

td(on)

Turn-on Delay T ime

Rise Time

VDD =50 V

ID =12 A

RG =4.7

Ω

VGS =10 V

(Resistive Load, see fig. 3)

Q gs

Qgd

Tot al G ate Charge

Gat e-Source Charge

Gat e-Drain Charge

VDD =80 V ID =24 A VGS =10 V

SWITCHING OFF

Symbo l

Parameter

Test Con ditions

Min.

Typ.

Max.

Unit

td(off)

Turn-off Delay T ime

Fall T ime

VDD =27 V

ID =12 A

RG =4.7

Ω

VGS =10 V

(Resistive Load, see fig. 3)

td(off)

Off -volt age Rise T ime

Fall T ime

Cross-over Time

Vclamp = 80 V

I D =24 A

RG =4.7

Ω

VGS =10 V

(Induct ive Load, see fig. 5)

SOURCE DRAIN DIODE

Symbo l

Parameter

Test Con ditions

Min.

Typ.

Max.

Unit

ISD

ISDM (

•)

Source-drain Current

(pulsed)

VSD (

∗)Forward On Voltage

ISD =24 A

VGS =0

1. 5

trr

Qrr

IRRM

Reverse Recovery

Time

Reverse Recovery

Charge

Reverse Recovery

Current

ISD = 24 A

di/dt = 100 A/

µs

VDD =50 V

Tj =150

(see t est circuit, f ig. 5)

100

375

7.5

(

∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %

(

•) Pulse width limited by safe operatingarea

STP24NF10

3/6

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