STP2HNC60FP datasheet(1/9 Pages) STMICROELECTRONICS

Il numero della parte	STP2HNC60FP

Spiegazioni elettronici	N-CHANNEL 600V - 4ohm - 2.2A TO-220/TO-220FP PowerMesh™ I MOSFET

PDF	9 Pages

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Produttore elettronici	STMICROELECTRONICS [STMicroelectronics]

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May 2001

STP2HNC60

STP2HNC60FP

N-CHANNEL 600V - 4

Ω - 2.2A TO-220/TO-220FP

PowerMesh™II MOSFET

s

TYPICAL RDS(on) = 4 Ω

s

EXTREMELY HIGH dv/dt CAPABILITY

s

100% AVALANCHE TESTED

s

NEW HIGH VOLTAGE BENCHMARK

s

GATE CHARGE MINIMIZED

DESCRIPTION

The PowerMESH

™II is the evolution of the first

generation of MESH OVERLAY

™. The layout re-

finements introduced greatly improve the Ron*area

figure of merit while keeping the device at the lead-

ing edge for what concerns swithing speed, gate

charge and ruggedness.

APPLICATIONS

s

HIGH CURRENT, HIGH SPEED SWITCHING

s

SWITH MODE POWER SUPPLIES (SMPS)

s

DC-AC CONVERTERS FOR WELDING

EQUIPMENT AND UNINTERRUPTIBLE

POWER SUPPLIES AND MOTOR DRIVER

ABSOLUTE MAXIMUM RATINGS

(•)Pulse width limited by safe operating area

.

TYPE

VDSS

RDS(on)

ID

STP2HNC60

STP2HNC60FP

600 V

< 5

Ω

< 5

Ω

2.2 A

Symbol

Parameter

Value

Unit

STP2HNC60

STP2HNC60FP

VDS

Drain-source Voltage (VGS = 0)

600

V

VDGR

Drain-gate Voltage (RGS = 20 kΩ)

600

V

VGS

Gate- source Voltage

± 30

V

ID

Drain Current (continuos) at TC = 25°C

2.2

2.2(*)

A

ID

Drain Current (continuos) at TC = 100°C

1.4

1.4(*)

A

IDM (q)

Drain Current (pulsed)

8.8

8.8(*)

A

PTOT

Total Dissipation at TC = 25°C

60

30

W

Derating Factor

0.48

0.24

W/°C

dv/dt

Peak Diode Recovery voltage slope

3.5

V/ns

VISO

Insulation Withstand Voltage (DC)

--

2000

V

Tstg

Storage Temperature

–65 to 150

°C

Tj

Max. Operating Junction Temperature

150

°C

(1)ISD ≤ 2.2A, di/dt ≤100A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX

(*).Limited only by maximum temperature allowed

TO-220

1

2

3

1

2

3

TO-220FP

INTERNAL SCHEMATIC DIAGRAM

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