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PM6670STR Scheda tecnica(PDF) 30 Page - STMicroelectronics |
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PM6670STR Scheda tecnica(HTML) 30 Page - STMicroelectronics |
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30 / 53 page ![]() Device description PM6670S 30/53 VDDQ output voltage can be set in the range of 0.9 V to 2.6 V. Adjustable mode automatically switches DDRSEL pin to become the power saving algorithm selector: if tied to +5 V, the forced-PWM (fixed frequency) control is performed. If grounded or connected to VREF pin (1.237 V reference voltage), the Pulse-Skip or Non-Audible Pulse-Skip Modes are respectively selected. 7.1.5 Current sensing and current limit The PM6670S switching controller uses a valley current sensing algorithm to properly handle the current limit protection and the inductor current zero-crossing information. The current is sensed during the conduction time of the low-side MOSFET. The current sensing element is the on-resistance of the low-side switch. The sensing scheme is visible in Figure 36 . Figure 36. Current sensing scheme An internal 100 µA current source is connected to C SNS pin that is also the non-inverting input of the positive current limit comparator. When the voltage drop developed across the sensing parameter equals the voltage drop across the programming resistor RILIM, the controller skips subsequent cycles until the overcurrent condition is detected or the output UV protection latches off the device (see Section 7.1.11: Over voltage and under voltage protections on page 35 ). Table 8. Mode-of-operation settings summary Mode DDRSEL VDDQ Operating mode VMODE > 4.3V VDDRSEL > 4.2V 1.8V Pulse-Skip 1V < VDDRSEL < 3.5V 1.5V <0.5V VMODE < 3.7V VDDRSEL > 4.2V ADJ Forced-PWM 1V < VDDRSEL < 3.5V Non-Audible Pulse-skip VDDRSEL < 0.5V Pulse-Skip HGATE PHASE CSNS LGATE PGND PM6670 100µA· R ILIM V IN V OUT I VALLEY·RDSon HGATE PHASE CSNS LGATE PGND PM6670 100µA· R ILIM V IN V OUT I VALLEY·RDSon PM6670S |
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