STP3NC70ZFP datasheet(1/10 Pages) STMICROELECTRONICS

Il numero della parte	STP3NC70ZFP

Spiegazioni elettronici	N-CHANNEL 700V - 4.1ohm - 2.5A TO-220/TO-220FP Zener-Protected PowerMESH™ II MOSFET

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June 2001

STP3NC70Z

STP3NC70ZFP

N-CHANNEL 700V - 4.1

Ω - 2.5A TO-220/TO-220FP

Zener-Protected PowerMESH™III MOSFET

(1) ISD ≤2.5A, di/dt ≤100A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX

(*) Limited by Maximum Temperature allowed

s

TYPICAL RDS(on) = 4.1Ω

s

EXTREMELY HIGH dv/dt AND CAPABILITY

GATE TO - SOURCE ZENER DIODES

s

100% AVALANCHE TESTED

s

VERY LOW GATE INPUT RESISTANCE

s

GATE CHARGE MINIMIZED

DESCRIPTION

The third generation of MESH OVERLAY™ Power

MOSFETs for very high voltage exhibits unsur-

passed on-resistance per unit area while integrat-

ing back-to-back Zener diodes between gate and

source. Such arrangement gives extra ESD capa-

bility with higher ruggedness performance as re-

quested

by a

large

variety

of single-switch

applications.

APPLICATIONS

s

SINGLE-ENDED SMPS IN MONITORS,

COMPUTER AND INDUSTRIAL APPLICATION

s

WELDING EQUIPMENT

ABSOLUTE MAXIMUM RATINGS

(•)Pulse width limited by safe operating area

TYPE

VDSS

RDS(on)

ID

STP3NC70Z

STP3NC70ZFP

700V

< 4.7

Ω

< 4.7

Ω

2.5 A

Symbol

Parameter

Value

Unit

STP3NC70Z

STP3NC70ZFP

VDS

Drain-source Voltage (VGS = 0)

700

V

VDGR

Drain-gate Voltage (RGS = 20 kΩ)

700

V

VGS

Gate- source Voltage

± 25

V

ID

Drain Current (continuos) at TC = 25°C

2.5

2.5 (*)

A

ID

Drain Current (continuos) at TC = 100°C

1.6

1.6 (*)

A

IDM (q)

Drain Current (pulsed)

10

A

PTOT

Total Dissipation at TC = 25°C

65

35

W

Derating Factor

0.52

0.28

W/°C

IGS

Gate-source Current (DC)

±50

mA

VESD(G-S)

Gate source ESD(HBM-C=100pF, R=1.5K

Ω)

1.5

KV

dv/dt (1)

Peak Diode Recovery voltage slope

3

V/ns

VISO

Insulation Withstand Voltage (DC)

-

2500

V

Tstg

Storage Temperature

–65 to 150

°C

Tj

Max. Operating Junction Temperature

150

°C

TO-220

1

2

3

TO-220FP

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