STB45NF3LL datasheet(1/11 Pages) STMICROELECTRONICS

Il numero della parte	STB45NF3LL

Spiegazioni elettronici	N-CHANNEL 30V - 0.014ohm - 45A TO-220 - TO220FP - D2PAK STripFET II™ POWER MOSFET

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November 2002

STP45NF3LL - STP45NF3LLFP

STB45NF3LL

N-CHANNEL 30V - 0.014

Ω - 45A TO-220 - TO220FP - D2PAK

STripFET II™ POWER MOSFET

(1) Starting Tj=25°C, ID= 22.5A, VDD=24V

s

TYPICAL RDS(on) = 0.014Ω @4.5V

s

OPTIMAL RDS(ON) x Qg TRADE-OFF @ 4.5V

s

CONDUCTION LOSSES REDUCED

s

SWITCHING LOSSES REDUCED

s

ADD SUFFIX “T4” FOR ORDERING IN TAPE &

REEL

DESCRIPTION

This application specific Power MOSFET is the

third genaration of STMicroelectronics unique

“Single Feature Size

™” strip-based process. The

resulting transistor shows the best trade-off be-

tween on-resistance ang gate charge. When used

as high and low side in buck regulators, it gives the

best performance in terms of both conduction and

switching losses. This is extremely important for

motherboards where fast switching and high effi-

ciency are of paramount importance.

APPLICATIONS

s

SPECIFICALLY DESIGNED AND OPTIMISED

FOR HIGH EFFICIENCY DC/DC

CONVERTERS

ABSOLUTE MAXIMUM RATINGS

(q) Pulse width limited by safe operating area

TYPE

VDSS

RDS(on)

ID

STP45NF3LL

STP45NF3LLFP

STB45NF3LL

30 V

<0.018

Ω

<0.018

Ω

<0.018

Ω

45 A

27 A

Symbol

Parameter

Value

Unit

TO-220/D2PAK

TO-220FP

VDS

Drain-source Voltage (VGS =0)

30

V

VDGR

Drain-gate Voltage (RGS =20kΩ)

30

V

VGS

Gate- source Voltage

± 16

V

ID

Drain Current (continuous) at TC = 25°C

45

27

A

ID

Drain Current (continuous) at TC = 100°C

32

19

A

IDM ( )

Drain Current (pulsed)

180

108

A

PTOT

Total Dissipation at TC = 25°C

70

25

W

Derating Factor

0.46

0.167

W/°C

EAS (1)

Single Pulse Avalanche Energy

241

mJ

Viso

Insulation Withstand Voltage (DC)

--

2500

V

Tstg

Storage Temperature

–55 to175

°C

Tj

Max. Operating Junction Temperature

D2PAK

1

3

1

2

3

TO-220

1

2

3

TO-220FP

INTERNAL SCHEMATIC DIAGRAM

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