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STP4NA60FP Scheda tecnica(PDF) 3 Page - STMicroelectronics

Il numero della parte STP4NA60FP
Spiegazioni elettronici  N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR
PDF  5 Pages
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Produttore elettronici  STMICROELECTRONICS [STMicroelectronics]
Homepage  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STP4NA60FP Scheda tecnica(HTML) 3 Page - STMicroelectronics

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ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
Symb ol
Parameter
Test Cond ition s
Mi n.
Typ .
Max.
Un it
td(on)
tr
Turn-on T ime
Rise Time
VDD
=300
V
ID
=2
A
RG =47
Ω
VGS =10 V
23
60
35
85
ns
ns
Qg
Qgs
Qgd
Total Gat e Charge
Gate-Source Charge
Gate-Drain Charge
VDD =480 V
ID =2 A
VGS =10 V
32
7
14
45
nC
nC
nC
SWITCHING OFF
Symb ol
Parameter
Test Cond ition s
Mi n.
Typ .
Max.
Un it
tr(Voff)
tf
tc
Of f-voltage Rise Time
Fall T ime
Cross-over T ime
VDD =480 V
ID =4 A
RG =47
Ω VGS =10 V
(see t est circuit, figure 5)
45
17
70
60
25
95
ns
ns
ns
SOURCE DRAIN DIODE
Symb ol
Parameter
Test Cond ition s
Mi n.
Typ .
Max.
Un it
ISD
ISDM (
•)
Source-drain Current
Source-drain
Current
(pulsed)
4.3
17.2
A
A
VSD (
∗)Forward On Voltage
ISD =4. 3 A
VGS =0
1.6
V
trr
Qrr
IRRM
Reverse
Recovery
Time
Reverse
Recovery
Charge
Reverse
Recovery
Current
ISD = 4 A
di/dt = 100 A/
µs
VDD =100 V
Tj =150
o C
(see circuit , figure 5)
480
6
25
ns
µC
A
(
∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
(
•) Pulse width limited by safe operating area
STP4NA60FP
3/5



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